| PART |
Description |
Maker |
| SW1N60C |
N-channel D-PAK/I-PAK/TO-92 MOSFET
|
SAMWIN
|
| SWD1N60C SWC1N60C SW1N60C |
N-channel D-PAK/I-PAK/TO-92 MOSFET
|
Xian Semipower Electronic Technology Co., Ltd.
|
| 160MT100KB 160MT120K 160MT120KB 160MT160KB 130MT80 |
THREE PHASE BRIDGE 三相桥式
800V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1200V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| GA250TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT
HALF-BRIDGE IGBT DOUBLE INT-A-PAK
|
IRF[International Rectifier]
|
| VSKH250-08PBF VSKL250-16 SKT250-04PBF SKT250-08PBF |
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
Silicon Controlled Rectifier, 555 A, 1600 V, SCR, MAGN-A-PAK-5
Silicon Controlled Rectifier, 555 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 555 A, 1000 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 377 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
Silicon Controlled Rectifier, 377 A, 1200 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
|
Vishay Semiconductors
Vishay Siliconix
|
| IRKLF200-04HK IRKHF200-04HK IRKLF200-08HK IRKLF200 |
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/二极H结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/可控L结构MAGN-A-pak功率模块)
200 A, MAGN-A-pak Power Modules(200A,8V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/二极H结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块00安培2V的，快速可控硅/二极结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,4V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培4V电压，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,12V,快速可控硅/可控硅T结构MAGN-A-pak功率模块) 200，磁共振-甲柏功率模块200安培2V的，快速可控硅/可控结构磁共甲柏功率模块
200 A, MAGN-A-pak Power Modules(200A,8V,蹇?????纭?浜??绠∪缁??MAGN-A-pak???妯″?)
|
International Rectifier, Corp.
|
| STP55NF06 STP55NF06FP STB55NF06 STB55NF06-1 -STP55 |
N-CHANNEL 60V - 0.015 OHM - 50A TO-220/TO-220FP/I2PAK/D2PAK STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D2PAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D?PAK STripFET⑩ II POWER MOSFET
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D?PAK STripFETII POWER MOSFET N沟道60V 0.015欧姆- 50ATO-220/TO-220FP/I巴基斯坦/数?巴基斯坦STripFET⑩二功率MOSFET
N-CHANNEL POWER MOSFET
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D?PAK STripFETII POWER MOSFET N沟道60V 0.015欧姆- 50A条TO-220/TO-220FP/I巴基斯坦/数?巴基斯坦STripFET⑩二功率MOSFET
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/D??AK STripFET??II POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
ST Microelectronics
|
| 112MT120KB 112MT120KBS90 112MT100KB 112MT140KB 112 |
THREE PHASE CONTROLLED BRIDGE
THREE PHASE CONTROLLED BRIDGE 三相控桥
CONN RING UNINSUL 12-10 AWG #10
HEADER, STRAIGHT, L/LATCH, 50WAY; Connector type:Wire-to-Board; Gender:Pin; Ways, No. of:50; Pitch, lead:2.54mm; Termination method:Solder; Material, contact:Phosphor Bronze (C510); Plating, contact:0.76u Gold over 2.54u Nickel; RoHS Compliant: Yes
CONN L/FORK UNINSUL 12-10 AWG #1
Ejector Latch; For Use With:3M Shrouded Latch / Ejector PCB Headers With Strain Relief RoHS Compliant: Yes
Ejector Latch; For Use With:3M Shrouded Latch / Ejector PCB Headers Without Strain Relief RoHS Compliant: Yes
800V 3 Phase Bridge in a INT-A-Pak package
1200V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 121NQ045 121NQ050 121NQ 121NQ035 121NQ040 121NQ045 |
45V 120A Schottky DISCR. (R) Diode in a D-67 HALF-Pak package
45V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
40V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
35V 120A Schottky Discrete Diode in a D-67 HALF-Pak package
SCHOTTKY RECTIFIER
|
IRF[International Rectifier]
|
| 8TQ080S 8TQ100S 8TQ 8TQ10 8TQ100STRR 8TQ080STRR |
16 A SPDT MINIATURE POWER RELAY
SCHOTTKY RECTIFIER
100V 8A Schottky Discrete Diode in a D2-Pak package
80V 8A Schottky Discrete Diode in a D2-Pak package
|
IRF[International Rectifier]
|
| 20ETS08FP 20ETS12FP 20ETS16FP 20ETS 20ETS08 20ETS1 |
SURFACE MOUNTABLE INPUT RECTIFIER DIODE
800V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
1200V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
1600V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
INPUTRECTIFIERDIODETO-220FULLPAK
SURFACEMOUNTABLEINPUTRECTIFIERDIODE
|
International Rectifier
InternationalRectifier
|
| AM29F400B-75FC AM29F400B-75SC AM29F400B-75EC AM29F |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP064V with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ24N with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU120N with Lead Free Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRF1010EL with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRF3710ZS with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ46NL with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRF1010N with Lead-Free Packaging.
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3709 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7466 with Lead Free Packaging
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3412 with Standard Packaging
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL2505S with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3911 with Lead Free Packaging
40V Single N-Channel Automotive HEXFET Power MOSFET in a TO-220AB package; Similar to IRF4104 with Lead Free Packaging x8/x16闪存EEPROM
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR3303 with Lead Free Packaging x8/x16闪存EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRLZ24N with Standard Packaging x8/x16闪存EEPROM
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR7821 with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF3707ZCL with Lead Free Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL8113L with Lead Free Packaging
40V Single N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7484 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU3910 with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3910 with Lead Free Packaging
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRLR2908 with Lead Free Packaging
|
Rochester Electronics, LLC
Amphenol, Corp.
Advanced Micro Devices, Inc.
|
